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HGTD3N60C3S Datasheet - Fairchild Semiconductor

HGTD3N60C3S - 6A/ 600V/ UFS Series N-Channel IGBTs

HGTD3N60C3S Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications

HGTD3N60C3S_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

HGTD3N60C3S

Manufacturer:

Fairchild Semiconductor

File Size:

227.94 KB

Description:

6a/ 600v/ ufs series n-channel igbts.

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