HGTD6N40E1 Datasheet (Intersil Corporation) - 6A/ 400V and 500V N-Channel IGBTs

HGTD6N40E1, 6A/ 400V and 500V N-Channel IGBTs

The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers.

These types can be operated directly from low power integrated

HGTD6N40E1 Features

* 6A, 400V and 500V

* VCE(ON): 2.5V Max.

* TFALL: 1.0µs

* Low On-State Voltage

* Fast Switching Speeds

* High Input Impedance Applications

* Power Supplies

* Motor Drives

* Protective Circuits HGTD6N40E1S, HGTD6N50E1S JEDEC TO