HGTD6N40E1S Datasheet - Intersil Corporation

HGTD6N40E1S 6A/ 400V and 500V N-Channel IGBTs

The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated.

HGTD6N40E1S Features

* 6A, 400V and 500V

* VCE(ON): 2.5V Max.

* TFALL: 1.0µs

* Low On-State Voltage

* Fast Switching Speeds

* High Input Impedance Applications

* Power Supplies

* Motor Drives

* Protective Circuits HGTD6N40E1S, HGTD6N50E1S JEDEC TO

HGTD6N40E1S Datasheet (32.55 KB)

HGTD6N40E1S Datasheet Preview — Preview of HGTD6N40E1S PDF

Datasheet Details

Part number:

HGTD6N40E1S

Manufacturer:

Intersil Corporation

File Size:

32.55 KB

Description:

6a/ 400v and 500v n-channel igbts.

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HGTD6N40E1S 400V and 500V N-Channel IGBTs Intersil Corporation

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