HGTD6N50E1

6A/ 400V and 500V N-Channel IGBTs

Intersil Corporation

HGTD6N50E1 Features

* 6A, 400V and 500V

* VCE(ON): 2.5V Max.

* TFALL: 1.0µs

* Low On-State Voltage

* Fast Switching Speeds

* High Input Impedance Applications

* Power Supplies

* Motor Drives

* Protective Circuits HGTD6N40E1S, HGTD6N50E1S JEDEC TO

HGTD6N50E1 General Description

The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated.

HGTD6N50E1 Datasheet (32.55 KB)

HGTD6N50E1 Datasheet Preview — Preview of HGTD6N50E1 PDF

Datasheet Details

Part number:

HGTD6N50E1

Manufacturer:

Intersil Corporation

File Size:

32.55 KB

Description:

6a/ 400v and 500v n-channel igbts.
HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S March 1997 6A, 400V and 500V N-Channel IGBTs Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA EMITTER .

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HGTD6N50E1 400V and 500V N-Channel IGBTs Intersil Corporation

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HGTD6N50E1 Features

HGTD6N50E1 General Description

Datasheet Details

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