400V Datasheet | Specifications & PDF Download

IMYR140R006M2H CoolSiC™ 1400 V SiC MOSFET G2 Final datasheet CoolSiC™ 1400 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technolo

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RHRP1540, RHRP1560 Data Sheet January 2000 File Number 3685.2 15A, 400V - 600V Hyperfast Diodes The RHRP1540 and RHRP1560 are hyperfast diodes with s

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1MBI400V-170-50 Power Module (V series) 1700V / 400A / 1-in-one package ■ Features High speed switching Voltage drive Low Inductance module structure

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FQB6N40C — N-Channel QFET® MOSFET FQB6N40C N-Channel QFET® MOSFET 400 V, 6 A, 1.0 Ω November 2013 Description These N-Channel enhancement mode powe

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FQD4P40 / FQU4P40 August 2000 QFET FQD4P40 / FQU4P40 400V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect t

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www.DataSheet4U.com FGD2N40L 400V N-Channel Logic Level IGBT March 2006 FGD2N40L 400V N-Channel Logic Level IGBT Features „ VCE(SAT) = 1.6V @ IC =

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DATA SHEET www.DataSheet4U.com Solid State Relay OCMOS FET PS7241-2A 8-PIN SOP, 400V BREAK DOWN VOLTAGE NORMALLY OPEN TYPE 2-ch Optical Coupled MOS

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Features  BVCEO > -400V  IC = -0.5A High Continuous Collector Current  ICM = -1.5A Peak Pulse Current  Low Saturation Voltage VCE(SAT) < -400mV @

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1MBI400VH-060L-50 Power Module (V series) 600V / 400A / 1-in-one package ■ Features High speed switching Voltage drive Low Inductance module structure

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IMYR140R011M2H CoolSiC™ 1400 V SiC MOSFET G2 Final datasheet CoolSiC™ 1400 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technolo

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ERC04(F) (1.5A) GENERAL USE RECTIFIER DIODE (200V to 400V / 1.5A ) Outline drawings, mm ø 4.0 ø 1.0 28 MIN. 7.5 28 MIN. Features Compact size, l

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MPKC2SA/CA200U40 400V FRD Module MPKC2SA/CA200U40 400V FRD Module General Description Ultra-FRD module devices are optimized to reduce losses and EM

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RHRG3040CC, RHRG3060CC Data Sheet January 2000 File Number 3939.3 30A, 400V - 600V Hyperfast Dual Diodes The RHRG3040CC and RHRG3060CC are hyperfast

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RHRP3040, RHRP3060 Data Sheet January 2000 File Number 3933.2 30A, 400V - 600V Hyperfast Diodes The RHRP3040 and RHRP3060 are hyperfast diodes with s

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IRF720B/IRFS720B November 2001 IRF720B/IRFS720B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transi

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IRFR330B / IRFU330B November 2001 IRFR330B / IRFU330B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect

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KP500A400~1000V Y35KPC -() Chinese Type Phase Control Thyristors (Capsule Version) Liujing rectifier co., Ltd. FEATURES 1). Center amplifying gate 2)

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ZXTP08400BFF 400V PNP MEDIUM POWER HIGH VOLTAGE TRANSISTOR IN SOT23F Features  BVCEO > -400V  BVECO > -6V  IC = -0.2A Continuous Collector Current

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http://www.fujielectric.com/products/semiconductor/ 1MBI2400VD-170E IGBT MODULE (V series) 1700V / 2400A / 1 in one package IGBT Modules Features H

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http://www.fujielectric.com/products/semiconductor/ 1MBI2400VS-170E IGBT MODULE (V series) 1700V / 2400A / 1 in one package IGBT Modules Features H

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