HGTD1N120BNS - 5.3A/ 1200V/ NPT Series N-Channel IGBT
HGTD1N120BNS Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as:
