Datasheet4U Logo Datasheet4U.com

HGTD1N120BNS Datasheet - Fairchild Semiconductor

HGTD1N120BNS - 5.3A/ 1200V/ NPT Series N-Channel IGBT

HGTD1N120BNS Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as:

HGTD1N120BNS_FairchildSemiconductor.pdf

Preview of HGTD1N120BNS PDF
HGTD1N120BNS Datasheet Preview Page 2 HGTD1N120BNS Datasheet Preview Page 3

Datasheet Details

Part number:

HGTD1N120BNS

Manufacturer:

Fairchild Semiconductor

File Size:

97.60 KB

Description:

5.3a/ 1200v/ npt series n-channel igbt.

📁 Related Datasheet

📌 All Tags