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HGTD1N120CNS Datasheet - Intersil Corporation

HGTD1N120CNS - 6.2A/ 1200V/ NPT Series N-Channel IGBT

HGTD1N120CNS Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such a

HGTD1N120CNS_IntersilCorporation.pdf

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Datasheet Details

Part number:

HGTD1N120CNS

Manufacturer:

Intersil Corporation

File Size:

77.17 KB

Description:

6.2a/ 1200v/ npt series n-channel igbt.

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