HGTD1N120CNS - 6.2A/ 1200V/ NPT Series N-Channel IGBT
HGTD1N120CNS Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such a
