* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such a
HGTD1N120CNS Datasheet (77.17 KB)
HGTD1N120CNS
Intersil Corporation
77.17 KB
6.2a/ 1200v/ npt series n-channel igbt.
HGTD1N120CNS, HGTP1N120CN Data Sheet January 2000 File Number 4652.2 6.2A, 1200V, NPT Series N-Channel IGBT The HGTD1N120CNS, and the HGTP1N120CN are.
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