Datasheet4U Logo Datasheet4U.com

HGTD3N60B3S Datasheet 7A/ 600V/ UFS Series N-Channel IGBTs

Manufacturer: Intersil (now Renesas)

Overview

HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Data Sheet January 2000 File Number 4368.

Key Features

  • of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching.