* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching appl
HGTG11N120CND Datasheet (110.12 KB)
HGTG11N120CND
Fairchild Semiconductor
110.12 KB
N-channel igbt.
HGTG11N120CND Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND is a Non-Punch Thro.
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