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HGTG10N120BND Datasheet, Fairchild Semiconductor

HGTG10N120BND igbt equivalent, n-channel igbt.

HGTG10N120BND Avg. rating / M : 1.0 rating-12

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HGTG10N120BND Datasheet

Features and benefits

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the.

Application

operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.

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