of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower o.

operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequen.

HGTP12N60A4

HGTP12N60B3

HGTP12N60B3D

HGTP12N60C3

HGTP12N60C3D

HGTP12N60D1

HGTP10N120BN

HGTP10N40C1

HGTP10N40C1D

HGTP10N40E1

HGTP10N40E1D

HGTP10N40F1D

HGTP10N50C1

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