HUFA75639S3S Datasheet - Fairchild Semiconductor

HUFA75639S3S N-Channel MOSFET

HUFA75639G3, HUFA75639P3, HUFA75639S3S Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed.

HUFA75639S3S Features

* 56A, 100V

* Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and Saber Thermal Impedance Models - www.fairchildsemi.com

* Peak Current vs Pulse Width Curve

* UIS Rating Curve

* Related Literature - TB334, “Guidelines f

HUFA75639S3S Datasheet (221.94 KB)