IRF614S Key Features
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current: 10µA (Max.) @ VDS = 250V
- Lower RDS(ON): 1.393Ω (Typ.)
- Part: IRF614S
- Manufacturer: Fairchild (official site)
- Size: 230.20 KB
Other IRF614S Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Vishay |
IRF614S | Power MOSFET |
International Rectifier |
IRF614SPBF | HEXFET Power MOSFET |
Inchange Semiconductor |
IRF614 | N-Channel Mosfet Transistor |
Intersil |
IRF614 | N-Channel Power MOSFET |
|
International Rectifier |
IRF614 | power mosfet |
IRF614S Description
$GYDQFHG 3RZHU 026)(7 IRF614S.