IRF644A Key Features
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current: 10µA (Max.) @ VDS = 250V
- Lower RDS(ON): 0.214Ω (Typ.)
- Part: IRF644A
- Description: Advanced Power MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 254.52 KB
Other IRF644A Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
IRF644A | N-Channel Mosfet Transistor |
International Rectifier |
IRF644 | Power MOSFET |
|
International Rectifier |
IRF644 | Power MOSFET |
Vishay |
IRF644 | Power MOSFET |
onsemi |
IRF644B | N-Channel BFET MOSFET |