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* 3.3A, 400V, RDS(on) = 1.75Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche teste.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching per.

IRF720

IRF7201

IRF7201PBF

IRF7202

IRF7203

IRF7204

IRF7204PBF

IRF7205

IRF7205PBF

IRF7207

IRF7207PBF

IRF720A

IRF720FI