* 0.7A, 100V
* rDS(ON) = 1.200Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance Symbol D Ordering Information PART NUMBER IRFD9110
IRFD9110
Fairchild Semiconductor
93.96 KB
P-channel power mosfet.
IRFD9110 Data Sheet January 2002 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transis.
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