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Fairchild Semiconductor Electronic Components Datasheet

IRFI510 Datasheet

Advanced Power MOSFET

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Advanced Power MOSFET
IRFW/I510A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175ΟC Operating Temperature
Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
Lower RDS(ON) : 0.289 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25 ΟC) *
Total Power Dissipation (TC=25 ΟC)
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8”from case for 5-seconds
BVDSS = 100 V
RDS(on) = 0.4
ID = 5.6 A
D2-PAK I2-PAK
2
1
3
1
2
3
1. Gate 2. Drain 3. Source
Value
100
5.6
4
20
+_ 20
63
5.6
3.3
6.5
3.8
33
0.22
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/ ΟC
ΟC
Thermal Resistance
Symbol
Characteristic
Typ.
R θJC
R θJA
R θJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
4.51
40
62.5
Units
ΟC/ /W
Rev. B
©1999 Fairchild Semiconductor Corporation


Fairchild Semiconductor Electronic Components Datasheet

IRFI510 Datasheet

Advanced Power MOSFET

No Preview Available !

IRFW/I510A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25ΟC unless otherwise specified)
Symbol
BVDSS
BV/ TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Min. Typ. Max. Units
Test Condition
100 --
-- 0.11
2.0 --
--
--
4.0
V
V/ ΟC
V
VGS=0V,ID=250 µA
ID=250µ A See Fig 7
VDS=5V,ID=250 µ A
-- -- 100 nA VGS=20V
-- -- -100
VGS=-20V
-- -- 10
VDS=100V
-- -- 100 µ A VDS=80V,TC=150ΟC
-- -- 0.4 VGS=10V,ID=2.8A
O4
-- 3.49 -- VDS=40V,ID=2.8A
O4
-- 190 240
--
55
65
VGS=0V,VDS=25V,f =1MHz
pF
See Fig 5
-- 21 25
-- 10 30
-- 14 40
VDD=50V,ID=5.6A,
-- 28 70 ns RG=24
See Fig 13
O4 O5
-- 18 50
-- 8.5 12
VDS=80V,VGS=10V,
-- 1.6 -- nC ID=5.6A
-- 4.1 --
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 5.6
Integral reverse pn-diode
A
-- 20
in the MOSFET
O4 -- -- 1.5 V TJ=25ΟC,IS=5.6A,VGS=0V
-- 85 --
-- 0.23 --
ns TJ=25ΟC ,IF=5.6A
µ C diF/dt=100A/ µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=3mH, IAS=5.6A, VDD=25V, RG=27, Starting TJ =25oC
O3 ISD <_ 5.6A, di/dt <_ 250A/ µs, V DD <_ BVDSS , Starting TJ =25 oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature


Part Number IRFI510
Description Advanced Power MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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