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IRFI624B, IRFW624B Datasheet - Fairchild Semiconductor

IRFI624B N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFI624B Features

* 4.1A, 250V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 13.5 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G! G S D2-PAK IRFW Series G D S I2-PAK I

IRFW624B_FairchildSemiconductor.pdf

This datasheet PDF includes multiple part numbers: IRFI624B, IRFW624B. Please refer to the document for exact specifications by model.
IRFI624B Datasheet Preview Page 2 IRFI624B Datasheet Preview Page 3

Datasheet Details

Part number:

IRFI624B, IRFW624B

Manufacturer:

Fairchild Semiconductor

File Size:

689.19 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: IRFI624B, IRFW624B.
Please refer to the document for exact specifications by model.

IRFI624B Distributor

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TAGS

IRFI624B IRFW624B N-Channel MOSFET Fairchild Semiconductor