Datasheet Summary
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Advanced Power MOSFET
Features
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 1.169 Ω (Typ.)
BVDSS = 200 V RDS(on) = 1.5 Ω ID = 0.77 A
SOT-223
2 1 3
1. Gate 2. Drain 3....