Datasheet4U Logo Datasheet4U.com

IRFM220B Datasheet 200v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: IRFM220B November 2001 IRFM220B 200V N-Channel MOSFET General.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Key Features

  • 1.13A, 200V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 10 pF) Fast switching Improved dv/dt capability D ! D " S G G! ! " " " SOT-223 IRFM Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 70°C) Drain Current - Pulsed (Note 1) IRFM220B.

More Datasheets from Fairchild (now onsemi)

Part Number Description
IRFM220A Advanced Power MOSFET
IRFM224B 250V N-Channel MOSFET
IRFM210A Advanced Power MOSFET
IRFM210B 200V N-Channel MOSFET
IRFM214B 250V N-Channel MOSFET
IRFM110A Advanced Power MOSFET
IRFM120A Power MOSFET
IRF101 N-Channel Power MOSFET
IRF120 N-Channel Power MOSFET
IRF121 N-Channel Power MOSFET

IRFM220B Distributor