Datasheet Details
| Part number | IRFM210B |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 705.27 KB |
| Description | 200V N-Channel MOSFET |
| Datasheet |
 IRFM210B Datasheet
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
Key Features
- 0.77A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching Improved dv/dt capability D ! D " S G G! ! " " " SOT-223 IRFM Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 70°C) Drain Current - Pulsed (Note 1) IRFM210.