IRFM210A Overview
.. Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 1.169 Ω (Typ.) IRFM210A BVDSS = 200 V RDS(on) = 1.5 Ω ID = 0.77 A 2 1 3 1. Gate 2. Drain 3. Source