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IRFP150 - N-Channel Power MOSFET

Features

  • 40A, 100V.
  • rDS(ON) = 0.055Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFP150.

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Full PDF Text Transcription

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N ESIG W D CT E N FOR ODU DED UTE PR N E STIT OMM REC LE SUB 150N T O N FP SIB Data IR Sheet POS S IRFP150 January 2002 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17431. Features • 40A, 100V • rDS(ON) = 0.
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