IRFR214 Key Features
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current: 10µA (Max.) @ VDS = 250V
- Lower RDS(ON): 1.393Ω (Typ.)
- Part: IRFR214
- Manufacturer: Fairchild (official site)
- Size: 229.57 KB
Other IRFR214 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Intersil |
IRFR214 | N-Channel Power MOSFETs |
International Rectifier |
IRFR214 | Power MOSFET |
Vishay |
IRFR214 | Power MOSFET |
Inchange Semiconductor |
IRFR214 | N-Channel MOSFET |
Samsung Semiconductor |
IRFR214A | Power MOSFET |
IRFR214 Description
$GYDQFHG 3RZHU 026)(7 IRFR214.