IRFR214 Datasheet N-channel Power MOSFETs

Manufacturer: Intersil (now Renesas)

Overview: IRFR214, IRFU214 Data Sheet July 1999 File Number 3274.2 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. They are advanced power MOSFETs are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for highpower bipolar switching transistors requiring high speed and low gate-drive power. These transistors can be operated directly from integrated circuits. Formerly developmental type TA17443.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	IRFR214
Manufacturer	Intersil (now Renesas)
File Size	52.94 KB
Description	N-Channel Power MOSFETs
Datasheet	IRFR214 IRFU214 Datasheet (PDF)

Key Features

2.2A, 250V.
rDS(ON) = 2.000Ω.
Single Pulse Avalanche Energy Rated.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
High Input Impedance.
150oC Operating Temperature.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFR214 IRFU214.

IRFR214 Distributor

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