IRFR214 Description
IRFR214, IRFU214 Data Sheet July 1999 File Number 3274.2 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are advanced power MOSFETs are designed for use in applications such as switching regulators, switching...
IRFR214 Key Features
- 2.2A, 250V
- rDS(ON) = 2.000Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- High Input Impedance
- 150oC Operating Temperature
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”