IRFR214
IRFR214 is Power MOSFET manufactured by Fairchild Semiconductor.
FEATURES
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current: 10µA (Max.) @ VDS = 250V
- Lower RDS(ON): 1.393Ω (Typ.)
BVDSS = 250 V RDS(on) = 2.0Ω ID = 2.2 A
D-PAK I-PAK
2 3
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt
TJ , TSTG
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C)
- Total Power Dissipation (TC=25°C) Linear Derating Factor
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
1. Gate 2. Drain 3....
