IRFR214 Datasheet | Vishay

FEATURES - Dynamic d V/dt rating - Repetitive avalanche rated - Surface-mount (IRFR214, Si HFR214) - Straight lead (IRFU214, Si HFU214) - Available in tape and reel - Fast switching Available - Ease of paralleling - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, Si HFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications. ORDERING INFORMATION PACKAGE Lead (Pb)-free and halogen-free DPAK (TO-252) Si HFR214-GE3 DPAK (TO-252) Si HFR214TRL-GE3 Lead (Pb)-free IRFR214Pb F IRFR214TRLPb F a Lead (Pb)-free and halogen-free IRFR214Pb F-BE3 b IRFR214TRLPb F-BE3 ab Notes a. See device orientation b. “-BE3” denotes alternate manufacturing location DPAK (TO-252) Si HFR214TR-GE3 IRFR214TRPb F a IRFR214TRPb F-BE3 ab DPAK (TO-252) Si HFR214TRR-GE3 IRFR214TRRPb F a - IPAK (TO-251) Si HFU214-GE3 IRFU214Pb F - ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VGS at 10 V TC = 25 °C TC = 100 °C Linear derating factor (PCB mount) e Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Maximum power dissipation (PCB mount) e Peak diode recovery d V/dt...