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Fairchild Semiconductor Electronic Components Datasheet

IRFR220A Datasheet

Advanced Power MOSFET

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Advanced Power MOSFET
IRFR/U220A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
Low RDS(ON) : 0.626 (Typ.)
BVDSS = 200 V
RDS(on) = 0.8
ID = 4.6 A
D-PAK I-PAK
2
11
3
2
3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC )
Continuous Drain Current (TC=100oC )
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25oC) *
Total Power Dissipation (TC=25oC)
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
1. Gate 2. Drain 3. Source
Value
200
4.6
2.9
18
+_ 30
71
4.6
4
5.0
2.5
40
0.32
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/oC
oC
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC Junction-to-Case --
RθJA
Junction-to-Ambient *
--
RθJA Junction-to-Ambient --
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
3.14
50
110
Units
oC/W
Rev. B
©1999 Fairchild Semiconductor Corporation


Fairchild Semiconductor Electronic Components Datasheet

IRFR220A Datasheet

Advanced Power MOSFET

No Preview Available !

IRFR/U220A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
BV/ TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
200 -- --
-- 0.24 --
2.0 -- 4.0
-- -- 100
-- -- -100
-- -- 10
-- -- 100
V VGS=0V,ID=250µA
V/oC ID=250 µA See Fig 7
V VDS=5V,ID=250 µA
nA VGS=30V
VGS=-30V
VDS=200V
µ A VDS=160V,TC=125 oC
Static Drain-Source
On-State Resistance
-- -- 0.8 VGS=10V,ID=2.3A
O4
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 2.36 -- VDS=40V,ID=2.3A
O4
-- 275 360
--
55
65
VGS=0V,VDS=25V,f =1MHz
pF
See Fig 5
-- 25 30
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 10 30
-- 11 30
VDD=100V,ID=5A,
-- 26 60 ns RG=18
See Fig 13
-- 15 40
O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain( “Miller “) Charge
-- 12 17
VDS=160V,VGS=10V,
-- 2.4
-- 6.2
--
--
nC
ID=5A
See Fig 6 & Fig 12
O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 4.6
Integral reverse pn-diode
A
-- 18
in the MOSFET
O4 -- -- 1.5 V TJ=25oC,IS=4.6A,VGS=0V
-- 122 -- ns TJ=25 oC ,IF=5A
-- 0.51 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=5mH, IAS=4.6A, VDD=50V, RG=27, Starting TJ =25 oC
O3 ISD<_ 5A, di/dt<_180A/ µs, V DD <_ BVDSS , Starting TJ =25
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
oC
O5 Essentially Independent of Operating Temperature


Part Number IRFR220A
Description Advanced Power MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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