| Description | Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com IRFW/I520A BVDSS = 100 V RDS(on) = 0.2 Ω ID = 9.2 A D2-PAK 2 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ.) Ο I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Sour... |
| Features |
Avalanche Rugged Technology Rugged Gate Oxide Technology
www.DataSheet4U.com
IRFW/I520A
BVDSS = 100 V RDS(on) = 0.2 Ω ID = 9.2 A
D2-PAK
2
Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ.)
Ο
I2-PAK
1 1 3 2 3
1. Ga...
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| Datasheet |
 IRFW520A Datasheet - 288.34KB |
