n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175℃ Operating Temperature n Lower Leakage Current : 10 μA (Max. ) @ VDS = 100V
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IRFW/I540A
BVDSS = 100 V RDS(on) = 0.052 Ω ID = 28 A
D2-PAK
2
I2-PAK
n Lower RDS(ON) : 0.041 Ω (Typ. )
1 1 3 2 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Conti.
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Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175℃ Operating Temperature n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V
www.DataSheet4U.com
IRFW/I540A
BVDSS = 100 V RDS(on) = 0.052 Ω ID = 28 A
D2-PAK
2
I2-PAK
n Lower RDS(ON) : 0.041 Ω (Typ.)
1 1 3 2 3
1. Gate 2. Drain 3.
IRFW540A Datasheet
