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Fairchild Semiconductor Electronic Components Datasheet

IRFW540A Datasheet

Advanced Power MOSFET

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Advanced Power MOSFET
IRFW/I540A
FEATURES
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n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n 175Operating Temperature
n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V
n Lower RDS(ON) : 0.041 Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25)
Continuous Drain Current (TC=100)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25) *
Total Power Dissipation (TC=25)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8? from case for 5-seconds
BVDSS = 100 V
RDS(on) = 0.052 Ω
ID = 28 A
D2-PAK I2-PAK
2
1
3
1
2
3
1. Gate 2. Drain 3. Source
Value
100
28
19.8
110
±20
523
28
10.7
6.5
3.8
107
0.71
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
1.4
40
62.5
Units
/W
Rev. B1
2001 Fairchild Semiconductor Corporation
1


Fairchild Semiconductor Electronic Components Datasheet

IRFW540A Datasheet

Advanced Power MOSFET

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IRFW/I540A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25unless otherwise specified)
Symbol
BVDSS
ΔBV/ΔTJ
VGS(th)
IGSS
IDSS
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RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
100 -- -- V
-- 0.11 -- V/
2.0 -- 4.0 V
-- -- 100 nA
-- -- -100
-- -- 10
-- -- 100 μA
VGS=0V,ID=250μA
ID=250μA See Fig 7
VDS=5V,ID=250μA
VGS=20V
VGS=-20V
VDS=100V
VDS=80V,TC=150
Static Drain-Source
On-State Resistance
-- -- 0.052 VGS=10V,ID=14A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 22.56 -- S
-- 1320 1710
-- 325 380 pF
-- 148 170
VDS=40V,ID=14A
VGS=0V,VDS=25V,f =1MHz
See Fig 5
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 18 50
--
--
18
90
50
180
ns
VDD=50V,ID=28A,
RG=9.1
See Fig 13 ④ ⑤
-- 56 120
Total Gate Charge
Gate-Source Charge
Gate-Drain(iller? Charge
-- 60 78
-- 10.8 --
-- 27.9 --
VDS=80V,VGS=10V,
nC ID=28A
See Fig 6 & Fig 12 ④ ⑤
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
--
-- 28
Integral reverse pn-diode
A
-- 110
in the MOSFET
-- -- 1.5 V TJ=25,IS=28A,VGS=0V
-- 132 -- ns TJ=25,IF=28A
-- 0.63 -- μC diF/dt=100A/μs
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=1mH, IAS=28A, VDD=25V, RG=27, Starting TJ =25
ISD28A, di/dt400A/μs, VDDBVDSS , Starting TJ =25
Pulse Test : Pulse Width = 250μs, Duty Cycle 2%
Essentially Independent of Operating Temperature
2


Part Number IRFW540A
Description Advanced Power MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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