IRFW630B Key Features
- 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% av
- Part: IRFW630B
- Description: N-Channel MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 671.69 KB
Other IRFW630B Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
IRFW630B | N-Channel MOSFET |
Samsung Semiconductor |
IRFW630A | Power MOSFET |