IRFW630B - N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRFW630B
Manufacturer	Fairchild ↗ Semiconductor
File Size	671.69 KB
Description	N-Channel MOSFET
Datasheet	IRFW630B_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
◀ ▲.
G S D2-PAK IRFW Series G D S I2-PAK IRFI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Contin.

📁 IRFW630B Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Dec 2, 2013 |