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IRFW634B Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: IRFW634B / IRFI634B November 2001 IRFW634B / IRFI634B 250V N-Channel.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies.

Key Features

  • 8.1A, 250V, RDS(on) = 0.45Ω @VGS = 10 V Low gate charge ( typical 29 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
  • ◀ ▲.
  • G! G S D2-PAK IRFW Series G D S I2-PAK IRFI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuo.

More Datasheets from Fairchild (now onsemi)

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IRFW620B N-Channel MOSFET
IRFW624A Power MOSFET
IRFW624B N-Channel MOSFET
IRFW640A Power MOSFET

IRFW634B Distributor