IRFW644A Key Features
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current: 10µA (Max.) @ VDS = 250V
- Lower RDS(ON): 0.214Ω (Typ.)
- Part: IRFW644A
- Description: Power MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 255.40 KB
Related Fairchild Semiconductor Datasheets
| Part Number | Description |
|---|---|
| IRFW644B | N-Channel MOSFET |
| IRFW640A | Power MOSFET |
| IRFW640B | N-Channel MOSFET |
| IRFW610B | N-Channel MOSFET |
| IRFW614A | Power MOSFET |