IRFW640A - Power MOSFET

This page provides the datasheet information for the IRFW640A, a member of the IRFI640A Power MOSFET family.

Product Overview

Fairchild Semiconductor

Part number	IRFW640A
Manufacturer	Fairchild Semiconductor
File Size	263.75 KB
Description	Power MOSFET
Datasheet	IRFW640A Datasheet
Additional preview pages of the IRFW640A datasheet.

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max. ) @ VDS = 200V Lower RDS(ON) : 0.144 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25oC) Continuous Drain Current (TC=100oC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanch.

Other Datasheets by Fairchild Semiconductor

Published: Aug 4, 2016 |