IRFW640A Datasheet Power MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: Advanced Power MOSFET IRFW/I640A.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max. ) @ VDS = 200V Lower RDS(ON) : 0.144 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25oC) Continuous Drain Current (TC=100oC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanch.