IRFW644A Datasheet | Fairchild Semiconductor

FEATURES - Avalanche Rugged Technology - Rugged Gate Oxide Technology - Lower Input Capacitance - Improved Gate Charge - Extended Safe Operating Area - Lower Leakage Current: 10µA (Max.) @ VDS = 250V - Lower RDS(ON): 0.214Ω (Typ.) IRFW/I644A BVDSS = 250 V RDS(on) = 0.28Ω ID = 14 A D2-PAK I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) - Total Power Dissipation (TC=25°C) Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds (2) (1) (1) (3) (1) Value 250 14 8.9 56 ±30 490 14 13.9 4.8 3.1 139 1.11 - 55 to +150 Units V A A V m J A m J V/ns W W W/°C °C 300 Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient - Junction-to-Ambient Typ. ---Max. 0.9 40 62.5 °C/W Units - When mounted on the minimum pad size remended (PCB Mount). Rev. B ©1999 Fairchild Semiconductor Corporation IRFW/I644A Electrical Characteristics (TC=25°C unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ( Miller ) Charge Min. Typ. Max. Units 250 -2.0 -----------------0.28 ------8.65 180 80 17 17 74 32 46 9.3...