Datasheet4U.com

IRFWZ14 - Power MOSFET

Product Overview

Fairchild Semiconductor

📥 Download Datasheet

IRFWZ14 Power MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – IRFWZ14

Datasheet Details

Part number	IRFWZ14
Manufacturer	Fairchild Semiconductor
File Size	217.34 KB
Description	Power MOSFET
Datasheet	IRFWZ14 Datasheet
Additional preview pages of the IRFWZ14 datasheet.

Product details

Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
175°C Operating Temperature.
Lower Leakage Current: 10µA (Max. ) @ VDS = 60V.
Lower RDS(ON): 0.097Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Curren.

📁 Similar Datasheet

IRFWZ24A - Power MOSFET (Samsung)
IRFWZ44A - Power MOSFET (Samsung)
IRFW450 - N-Channel MOSFET Transistor (Inchange Semiconductor)
IRFW610A - Power MOSFET (Samsung)
IRFW630A - Power MOSFET (Samsung)
IRFW630B - N-Channel MOSFET (ON Semiconductor)
IRFW720A - Power MOSFET (Samsung)
IRFW730A - Power MOSFET (Samsung)

Other Datasheets by Fairchild Semiconductor

IRFWZ14A - Power MOSFET
IRFWZ24 - Power MOSFET
IRFWZ34 - Power MOSFET
IRFWZ34A - Power MOSFET
IRFWZ44 - Power MOSFET
IRFW520A - Advanced Power MOSFET

Published: Aug 3, 2016 |