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IRFWZ14 - Power MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number: IRFWZ14
Manufacturer: Fairchild Semiconductor
File Size: 217.34 KB
Datasheet: IRFWZ14-FairchildSemiconductor.pdf
Description: Power MOSFET

IRFWZ14 Product details

Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
175°C Operating Temperature.
Lower Leakage Current: 10µA (Max. ) @ VDS = 60V.
Lower RDS(ON): 0.097Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Curren.

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Power MOSFET Fairchild Semiconductor

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IRFWZ14 Stock/Price