Key Features
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- 175° C Operating Temperature
- Lower Leakage Current: 10µA (Max.) @ VDS = 60V
- Lower RDS(ON): 0.050µ (Typ.) IRFZ24A BVDSS = 60 V RDS(on) = 0.07Ω ID = 17 A TO-220 1 2 3
- Drain
- Source
Datasheets by Manufacturer
- IRFZ24VS — International Rectifier — HEXFET Power MOSFET
- IRFZ24VLPbF — International Rectifier — HEXFET Power MOSFET
- IRFZ24NL — TRANSYS — Power MOSFET
- IRFZ24NS — TRANSYS — Power MOSFET
- IRFZ24L — Vishay — Power MOSFET
- IRFZ24N — NXP Semiconductors — N-channel enhancement mode TrenchMOS transistor
- IRFZ24NS — International Rectifier — Power MOSFET
- IRFZ24NLPBF — International Rectifier — HEXFET Power MOSFET
- IRFZ24NSPBF — International Rectifier — HEXFET Power MOSFET
- IRFZ24VSPbF — International Rectifier — HEXFET Power MOSFET
