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IRL620A Key Features
- Logic-Level Gate Drive
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current: 10µA (Max.) @ VDS = 200V
- Lower RDS(ON): 0.609Ω (Typ.)
Other IRL620A Datasheets
| Manufacturer |
Part Number |
Description |
Vishay |
IRL620
|
Power MOSFET |
International Rectifier |
IRL620
|
POWER MOSFET |
|
International Rectifier |
IRL620S
|
POWER MOSFET |
|
Vishay |
IRL620S
|
Power MOSFET |
|
International Rectifier |
IRL620SPBF
|
HEXFET Power MOSFET |
IRL620A Description
$GYDQFHG 3RZHU.
