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IRL620A - Advanced Power MOSFET

Overview

$GYDQFHG 3RZHU 026)(7.

Key Features

  • Logic-Level Gate Drive.
  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 200V.
  • Lower RDS(ON): 0.609Ω (Typ. ) IRL620A BVDSS = 200 V RDS(on) = 0.8Ω ID = 5 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Dra.