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IRLI530A Key Features
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- 175° C Operating Temperature
- Lower Leakage Current: 10µA (Max.) @ VDS = 100V
- Lower RDS(ON): 0. 101Ω (Typ.)
Other IRLI530A Datasheets
| Manufacturer |
Part Number |
Description |
International Rectifier |
IRLI530G
|
Power MOSFET |
Vishay |
IRLI530G
|
Power MOSFET |
|
International Rectifier |
IRLI530N
|
HEXFET Power MOSFET |
|
International Rectifier |
IRLI530NPBF
|
HEXFET Power MOSFET |
Infineon |
IRLI530NPbF
|
Power MOSFET |
