IRLR120N Key Features
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current: 10µA (Max.) @ VDS = 100V
- Lower RDS(ON): 0.176Ω (Typ.)
- Part: IRLR120N
- Manufacturer: Fairchild (official site)
- Size: 226.14 KB
Other IRLR120N Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
International Rectifier |
IRLR120N | Power MOSFET |
Inchange Semiconductor |
IRLR120N | N-Channel MOSFET |
|
International Rectifier |
IRLR120NPBF | Power MOSFET |
|
International Rectifier |
IRLR120 | HEXFET Power MOSFET |
Vishay |
IRLR120 | Power MOSFET |
IRLR120N Description
$GYDQFHG 3RZHU 026)(7 IRLR120N.