IRLR120N Overview
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface...
IRLR120N Key Features
- Straight Lead (IRLU120N)
- Advanced Process Technology
- Fast Switching
