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IRLR120N Datasheet Power MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: $GYDQFHG 3RZHU 026)(7 IRLR120N.

Key Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 100V.
  • Lower RDS(ON): 0.176Ω (Typ. ) BVDSS = 100 V RDS(on) = 0.22Ω ID = 8.4 A D-PAK I-PAK 2 11 3 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (.

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