IRLR120N
IRLR120N is Power MOSFET manufactured by Fairchild Semiconductor.
$GYDQFHG 3RZHU 026)(7
Features
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current: 10µA (Max.) @ VDS = 100V
- Lower RDS(ON): 0.176Ω (Typ.)
BVDSS = 100 V RDS(on) = 0.22Ω ID = 8.4 A
D-PAK I-PAK
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