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IRLR120N - Power MOSFET

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Fairchild Semiconductor

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IRLR120N Power MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – IRLR120N

Datasheet Details

Part number	IRLR120N
Manufacturer	Fairchild Semiconductor
File Size	226.14 KB
Description	Power MOSFET
Datasheet	IRLR120N Datasheet
Additional preview pages of the IRLR120N datasheet.

Product details

Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current: 10µA (Max. ) @ VDS = 100V.
Lower RDS(ON): 0.176Ω (Typ. ) BVDSS = 100 V RDS(on) = 0.22Ω ID = 8.4 A D-PAK I-PAK 2 11 3 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (.

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Published: Aug 4, 2016 |