Datasheet Details
| Part number | IRLR120NPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 281.25 KB |
| Description | Power MOSFET |
| Datasheet |
 IRLR120NPBF Datasheet
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General Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
Key Features
- D. U. T.
- ISD controlled by Duty Factor "D".
- D. U. T. - Device Under Test + - VDD Driver Gate Drive P. W. Period D= P. W. Period VGS=10V.
- D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop VDD Ripple ≤ 5% ISD.
- VGS = 5V for Logic Level Devices Fig 14. For N-Channel.