IRLR120A - N-CHANNEL MOSFET

Fairchild (now onsemi)

Key Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current: 10µA (Max. ) @ VDS = 100V.
Lower RDS(ON): 0.176Ω (Typ. ) IRLR/U120A BVDSS = 100 V RDS(on) = 0.22Ω ID = 8.4 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Conti.

IRLR120A n-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	IRLR120A
Manufacturer	Fairchild (now onsemi)
File Size	225.83 KB
Description	N-CHANNEL MOSFET
Datasheet	IRLR120A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.176Ω (Typ.) IRLR/U120A BVDSS = 100 V RDS(on) = 0.22Ω ID = 8.4 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3.