n Logic-Level Gate Drive n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µ A (Max. ) @ VDS = 100V n Lower RDS(ON) : 0.336 Ω (Typ. )
IRLS510A
BVDSS = 100 V RDS(on) = 0.44 Ω ID = 4.5 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=2.
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Advanced Power MOSFET
FEATURES
n Logic-Level Gate Drive n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V n Lower RDS(ON) : 0.336 Ω (Typ.)
IRLS510A
BVDSS = 100 V RDS(on) = 0.44 Ω ID = 4.5 A
TO-220F
1
2
3
1.Gate 2. Drain 3.
IRLS510A Datasheet
