KSD2012 Datasheet | Fairchild Semiconductor

Low Frequency Power Amplifier - plement to KSB1366 TO-220F 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 60 60 7 3 0.3 25 150 - 55 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO ICBO IEBO h FE1 h FE2 VCE(sat) VBE(on) f T Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Test Condition IC = 50m A, IB = 0 VCB = 60V, IE = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 0.5A VCE = 5V, IC = 3A IC = 2A, IB = 0.2A VCE = 5V, IC = 0.5A VCE = 5V, IC = 0.5A 100 20 0.4 0.7 3 Min. 60 Typ. Max. 100 10 320 1 1 V V MHz Units V µA µA h FE Classification Classification h FE1 Y 100 ~ 200 G 150 ~ 320 ©2000 Fairchild Semiconductor International Rev. A, February 2000 Typical Characteristics Ic[A], COLLECTOR CURRENT 3 h FE, DC CURRENT GAIN m A 90 m A I B = = 80 IB IB = 70m A IB = 60m A IB = 50m A VCE = 5V IB = 40m A IB = 30m A IB = 20m A IB = 10m A IB = 0m A 0 0 1 2 3 4 5 6 7 8 1 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VCE(sat)[V], SATURATION VOLTAGE Ic = 10 IB VCE = 5V IC[A], COLLECTOR...