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Fairchild Semiconductor Electronic Components Datasheet

MOC8204 Datasheet

GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS

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MOC8204 pdf
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
DESCRIPTION
The MOC8204 device consists of a gallium arsenide infrared emitting diode
optically coupled to a high voltage, silicon, phototransistor detector in a
standard 6-pin DIP package. It is designed for high voltage applications and
is particularly useful in copy machines and solid state relays.
MOC8204
APPLICATIONS
• Copy Machines
• Interfacing and coupling systems of different potentials and impedances
• Monitor and Detection Circuits
• Solid State Relays
SCHEMATIC
16
25
3 NC
4
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Input-Output Isolation Voltage
Peak ac Voltage, 60 Hz, 1 Second Duration(1)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
EMITTER
DC/Average Forward Input Current
Forward Current - Peak (Pulse Width = 1µs, 330 pps)
LED Power Dissipation @ TA = 25°C
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
2001 Fairchild Semiconductor Corporation
DS300269 3/22/01
Symbol
TSTG
TOPR
TSOL
VISO
PD
IF
IF(pk)
PD
VCEO
VCBO
VECO
PD
1 OF 6
Value
-55 to +150
-55 to +100
260 for 10 sec
7500
250
2.94
60
1.2
120
1.41
400
400
7
150
1.76
Units
°C
°C
°C
Vac(pk)
mW
mA
A
mW
mW/°C
V
V
V
mW
mW/°C
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

MOC8204 Datasheet

GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS

No Preview Available !

MOC8204 pdf
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
MOC8204
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions
EMITTER
Input Forward Voltage
(IF = 10 mA)
Reverse Leakage Current
Capacitance
(VR = 6.0 V)
(V = 0, f =1 MHz)
DETECTOR
Collector-Emitter Breakdown Voltage (IC = 1.0 mA, RBE = 1M!)
Collector-Base Breakdown Voltage
(IC = 100 µA)
Emitter-Base Breakdown Voltage
(IE = 100 µA)
Collector-Emitter Dark Current
TA = 25°C
(RBE = 1M!, VCE = 300 V)
TA = 100°C
Symbol
VF
IR
CJ
BVCEO
BVCBO
BVEBO
ICEO
Min
400
400
7
Typ(1)
1.2
18
Max
15
10
100
250
Unit
V
µA
pF
V
V
V
nA
µA
ISOLATION CHARACTERISTICS
Characteristic
Test Conditions Symbol
Output Collector Current
(VCE = 10 V, IF = 10 mA, RBE = 1M!) IC (CTR)(2)
Collector-Emitter Saturation Voltage (IC = 0.5 mA, IF = 10 mA, RBE = 1M!) V(SAT)
Input-Output Isolation Voltage(3)
Isolation Resistance(3)
Isolation Capacitance(1)
Turn-On Time
Turn-Off Time
(II-O 1 µA, Time = 1min)
(VCC = 10 V, IC = 2 mA, RL = 100!)
VISO
RISO
CISO
tON
tOFF
Min
2 (20)
5300
7300
Typ(1)
1011
0.2
5
5
Max
0.4
Units
mA(%)
V
VAC(RMS)
VAC(PEAK)
!
pf
µs
Notes
1. Alway design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC /IF x 100%.
3. For this test LED pins 1 and 2 are common and phototransistor Pins 4,5 and 6 are common.
www.fairchildsemi.com
2 OF 6
3/22/01 DS300269


Part Number MOC8204
Description GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
Maker Fairchild Semiconductor
Total Page 6 Pages
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