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MOC8204M

6-Pin DIP High Voltage Phototransistor Optocouplers

MOC8204M Features

* High Voltage:

* MOC8204M, BVCEO = 400 V

* H11D1M, BVCEO = 300 V

* H11D3M, BVCEO = 200 V

* Safety and Regulatory Approvals:

* UL1577, 4,170 VACRMS for 1 Minute

* DIN

* EN/IEC60747

* 5

* 5, 850 V Peak Working Insulation Voltag

MOC8204M General Description

The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor

*type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six

*pin dual

*in

*line pa.

MOC8204M Datasheet (334.62 KB)

Preview of MOC8204M PDF

Datasheet Details

Part number:

MOC8204M

Manufacturer:

ON Semiconductor ↗

File Size:

334.62 KB

Description:

6-pin dip high voltage phototransistor optocouplers.

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MOC8204M 6-Pin DIP High Voltage Phototransistor Optocouplers ON Semiconductor

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