MOC8106M Phototransistor Optocouplers

ON Semiconductor

Description

6-Pin DIP High BVCEO Phototransistor Optocouplers CNY17 Series, MOC8106M .
The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in.

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Datasheet Specifications

Part number: MOC8106M
Manufacturer: ON Semiconductor ↗
File Size: 367.63 KB
Datasheet: MOC8106M-ONSemiconductor.pdf
Description: Phototransistor Optocouplers

Features

* High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)
* Closely Matched Current Transfer Ratio (CTR) Minimizes Unit
* to
* Unit Variation
* Current Transfer Ratio In Select Groups
* Very Low Coupled Capacitance Along With No Chip
* to
* Pin 6 Base Connectio

Applications

* Power Supply Regulators
* Digital Logic Inputs
* Microprocessor Inputs
* Appliance Sensor Systems
* Industrial Controls DATA SHEET www. onsemi. com 6 1 PDIP6 CASE 646BY 6 1 PDIP6 CASE 646BX 6 1 PDIP6 CASE 646BZ MARKING DIAGRAM ON 1 CNY17
* 1 2 V X YY Q 6 34 5 1. ON =

MOC8106M Distributors

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MOC8106M Phototransistor Optocouplers ON Semiconductor

ON Semiconductor MOC8106M-like datasheet