MOC8106M - Phototransistor Optocouplers

Product Overview

ON Semiconductor

Datasheet Details

Part number	MOC8106M
Manufacturer	ON Semiconductor
File Size	367.63 KB
Description	Phototransistor Optocouplers
Datasheet	MOC8106M Datasheet
Additional preview pages of the MOC8106M datasheet.

Product details

Description

The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in line package.

Features

High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M).
Closely Matched Current Transfer Ratio (CTR) Minimizes Unit.
to.
Unit Variation.
Current Transfer Ratio In Select Groups.
Very Low Coupled Capacitance Along With No Chip.
to.
Pin 6 Base Connection for Minimum Noise Susceptibility (CNY17FXM, MOC8106M).
Safety and Regulatory Approvals:  UL1577, 4,170 VACRMS for 1 Minute  DIN.
EN/IEC60747.
5.
5, 850 V Peak Working Ins.

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Published: Sep 13, 2022 |